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INCHANGE Semiconductor isc Product Specification isc Silicon PNP Darlington Power Transistor 2SB1343 DESCRIPTION *Collector-Emitter Breakdown Voltage: V(BR)CEO= -100V(Min) *High DC Current Gain: hFE= 1000(Min)@ (VCE= -3V, IC= -2A) APPLICATIONS *Designed for power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Current-Continuous w w scs .i w -100 V -100 V -7 V -8 A -10 A 2 W 40 .cn mi e ICM Collector Current-Peak Collector Power Dissipation @Ta=25 PC Collector Power Dissipation @TC=25 TJ Junction Temperature 150 Tstg Storage Temperature -55~150 isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon PNP Darlington Power Transistor ELECTRICAL CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN 2SB1343 TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= -5mA; IB= 0 B -100 V V(BR)CBO Collector-Base Breakdown Voltage IC= -50A; IE= 0 -100 V VCE(sat) Collector-Emitter Saturation Voltage IC= -3A; IB= -6mA B -1.5 V A ICBO Collector Cutoff Current VCB= -100V ; IE= 0 -10 IEBO Emitter Cutoff Current VEB= -5V; IC= 0 -3 mA hFE DC Current Gain IC= -2A ; VCE= -3V COB Output Capacitance fT Current-Gain--Bandwidth Product w w scs .i w IE= 0; VCB= -10V; ftest= 1MHz IE= 0.5A; VCE= -5V; ftest= 10MHz .cn mi e 1000 20000 90 pF 12 MHz isc Websitewww.iscsemi.cn 2 |
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